Display device and electronic apparatus

ABSTRACT

To make it possible to improve display quality more. 
     Provided is a display device including: a pixel unit in which a plurality of pixel circuits (PIX_A, PIX_B, PIX_C) each of which includes a light emitting element and a driving circuit configured to drive the light emitting element are arranged in a matrix form. In a diffusion layer in which transistors included in the driving circuits of the pixel circuits (PIX_A, PIX_B, PIX_C) are formed, an electricity supply region ( 223 ) that is an active area for supplying an electric potential to a well is provided between mutually adjacent ones of the pixel circuits (PIX_A, PIX_B, PIX_C).

TECHNICAL FIELD

The present disclosure relates to a display device and an electronicapparatus.

BACKGROUND ART

A display device drivable by what is called an active matrix systemusually has a configuration in which a light emitting element and apixel circuit including a driving circuit for causing the light emittingelement to be driven are provided in a position corresponding to each ofthe points of intersection of a plurality of scanning lines that extendalong a lateral direction (hereinafter, occasionally referred to as ahorizontal direction) of a display surface and are placed to he arrangedin an upright direction (hereinafter, occasionally referred to as avertical direction) of the display surface and a plurality of data lines(signal lines) that extend along the vertical direction and are placedto be arranged in the horizontal direction. One pixel circuitcorresponds to one pixel or sub-pixel. The electric potentials of thescanning line and the signal line are changed at appropriate timings;thereby, the on/off of an active element (a transistor or the like)provided in the driving circuit in the pixel circuit is controlled asappropriate, and the light emission of the light emitting element in thepixel circuit is controlled. As a display device drivable by an activematrix system, for example, a display device in which an organic lightemitting diode (OLED) is used as a light emitting element (hereinafter,occasionally referred to as an organic electroluminescence (EL) displaydevice) is developed (for example, Patent Literatures 1 and 2).

CITATION LIST Patent Literature

Patent Literature 1: WO 2014/103500

Patent Literature 2: JP 2013-113868A

DISCLOSURE OF INVENTION Technical Problem

In a display surface of a display device drivable by an active matrixsystem, a plurality of pixel circuits are arranged in a matrix form. Inthis configuration, it is feared that a parasitic capacitance will beformed between an active area of a diffusion layer in a pixel circuitand an active area of a diffusion layer in an adjacent other pixelcircuit, and coupling via the parasitic capacitance will be causedbetween the active areas. If coupling occurs, the operation of a pixelcircuit influences the operation of an adjacent other pixel circuit;consequently, a desired emission luminance is not obtained, and areduction in display quality may be caused. However, it cannot be saidthat, in the technologies described in Patent Literatures 1 and 2, thesuppression of the influence of such coupling between adjacent pixelcircuits has been studied sufficiently.

Here, these days, mounting on a wearable device is studied for anorganic EL display device. In such a use, reduction in the size andweight is required of the organic EL display device in order to reducethe size and weight of the wearable device. However, in a case where itis attempted to thus make the size of the organic light emitting displaydevice smaller, it is required to make the distance between adjacentpixel circuits shorter, and consequently the influence of couplingdescribed above becomes more significant. Hence, particularly for asmall-sized organic light emitting display device, a technology tosuppress the influence of coupling between adjacent pixel circuits hasbeen desired more strongly.

Thus, the present disclosure proposes a new and improved display deviceand a new and improved electronic apparatus capable of improving displayquality more.

Solution to Problem

According to the present disclosure, there is provided a display deviceincluding: a pixel unit in which a plurality of pixel circuits each ofwhich includes a light emitting element and a driving circuit configuredto drive the light emitting element are arranged in a matrix form. In adiffusion layer in which transistors included in the driving circuits ofthe pixel circuits are formed, an electricity supply region that is anactive area for supplying an electric potential to a well is providedbetween mutually adjacent ones of the pixel circuits.

In addition, according to the present disclosure, there is provided anelectronic apparatus including: a display device configured to performdisplay on a basis of a video signal. The display device includes apixel unit in which a plurality of pixel circuits each of which includesa light emitting element and a driving circuit configured to drive thelight emitting element are arranged in a matrix form, and in a diffusionlayer in which transistors included in the driving circuits of the pixelcircuits are formed, an electricity supply region that is an active areafor supplying an electric potential to a well is provided betweenmutually adjacent ones of the pixel circuits.

According to the present disclosure, in a pixel unit serving as adisplay surface of a display device, an electricity supply region isprovided between mutually adjacent pixel circuits. The electricitysupply region functions as a shield, and thereby interference betweenadjacent pixel circuits is suppressed. Therefore, each pixel circuit canperform a desired operation, and a desired luminance is obtained in eachpixel circuit. Thus, display quality can be improved more.

Advantageous Effects of Invention

As described above, according to the present disclosure, display qualitycan be improved more. Note that the effects described above are notnecessarily limitative. With or in the place of the above effects, theremay be achieved any one of the effects described in this specificationor other effects that may be grasped from this specification.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic diagram showing an overall configuration of adisplay device according to the present embodiment.

FIG. 2 is a schematic diagram showing a configuration of a pixel unit, ascanning unit, and a selection unit shown in FIG. 1, in more detail.

FIG. 3 is a schematic diagram showing a configuration of a pixel circuitshown in FIG. 2.

FIG. 4 is a diagram for describing operation of the pixel circuitaccording to the present embodiment.

FIG. 5 is a top view schematically showing an example of an ordinarylayout in a case where a diffusion layer of pixel circuits according tothe present embodiment has the ordinary layout.

FIG. 6 is a timing waveform diagram when pixel circuits operate in acase where the ordinary layout shown in FIG. 5 is used.

FIG. 7 is a top view schematically showing an example of a layout of adiffusion layer of pixel circuits according to the present embodiment.

FIG. 8 is a timing waveform diagram when pixel circuits operate in acase where the layout according to the present embodiment shown in FIG.7 is used.

FIG. 9 is a cross-sectional view showing a specific configurationexample of the display device according to the present embodiment.

FIG. 10 is a diagram showing an external appearance of a smartphone thatis an example of an electronic apparatus in which the display deviceaccording to the present embodiment can be used.

FIG. 11 is a diagram showing an external appearance of a digital camerathat is another example of an electronic apparatus in which the displaydevice according to the present embodiment can be used.

FIG. 12 is a diagram showing an external appearance of the digitalcamera that is the other example of the electronic apparatus in whichthe display device according to the present embodiment can be used.

FIG. 13 is a diagram showing an external appearance of a head-mounteddisplay that is another example of an electronic apparatus in which thedisplay device according to the present embodiment can be used.

MODE(S) FOR CARRYING OUT THE INVENTION

Hereinafter, (a) preferred embodiment(s) of the present disclosure willbe described in detail with reference to the appended drawings. Notethat, in this specification and the appended drawings, structuralelements that have substantially the same function and structure aredenoted with the same reference numerals, and repeated explanation ofthese structural elements is omitted.

Note that, in the drawings, the sizes etc. of some layers in thecross-sectional view and some areas in the top view showing a layout maybe expressed exaggeratedly for the sake of description. The relativesizes of layers, areas, etc. shown in the drawings do not necessarilyexpress the actual magnitude relationships between layers, areas, etc.accurately.

Further, in the following, an embodiment in which the display device isan organic EL display device is described as an example of the presentdisclosure. However, the present disclosure is not limited to thisexample, and the display device that is an object of the presentdisclosure may be various display devices as long as they are displaydevices drivable by an active matrix-type driving system.

Note that the description is given in the following order.

-   1. Overall configuration of display device-   2. Configuration of pixel circuit-   3. Operation of pixel circuit-   4. Layout of pixel circuits-   4-1. Ordinary layout-   4-2. Layout according to present embodiment-   5. Specific configuration example of display device-   6. Application examples-   7. Supplement

1. OVERALL CONFIGURATION OF DISPLAY DEVICE

An overall configuration of a display device according to an embodimentof the present disclosure will now be described with reference to FIG. 1and FIG. 2. FIG. 1 is a schematic diagram showing an overallconfiguration of a display device according to the present embodiment.FIG. 2 is a schematic diagram showing the configuration of a pixel unit,a scanning unit, and a selection unit shown in FIG. 1, in more detail.

Referring to FIG. 1, in a display device 1 according to the presentembodiment, a pixel unit 20, a scanning unit 30, and a selection unit 40are arranged on a display panel 10. As shown in FIG. 2, in the pixelunit 20, a plurality of pixel circuits 210 are arranged in a matrixform. Note that, although written as the pixel circuit 210 for the sakeof convenience, “the pixel circuit 210” shown in FIG. 2 shows a portionexcluding an interconnection layer of the pixel circuit 210; inpractice, in the pixel circuit 210, interconnections (interconnectionsextending from the scanning unit 30 and the selection unit 40, a powersupply line 332, etc. described later) may be connected to “the pixelcircuit 210” shown in FIG. 2. That is, these interconnections may beprovided in common to a plurality of pixel circuits 210, but they canalso be parts of the pixel circuit 210; thus, in FIG. 2, a portionexcluding the interconnection layer of the pixel circuit 210 is shown asthe pixel circuit 210 for the sake of convenience. In the presentspecification, in a case of being written as “the pixel circuit 210,”this component may thus refer to only a portion excluding theinterconnection layer of the pixel circuit 210 for the sake ofconvenience.

One pixel circuit 210 corresponds to one sub-pixel. Here, the displaydevice 1 is a display device capable of color display, and one pixelserving as a unit that forms a color image includes a plurality ofsub-pixels. Specifically, one pixel includes three sub-pixels of asub-pixel that emits red light, a sub-pixel that emits green light, anda sub-pixel that emits blue light. In FIG. 2, a color (R, G, or B)corresponding to each sub-pixel is simulatively written in each pixelcircuit 210. Light emission in each pixel circuit 210 (that is, eachsub-pixel) is controlled as appropriate, and thereby a desired image isdisplayed in the pixel unit 20. Thus, the pixel unit 20 corresponds to adisplay surface in the display device 1.

However, in the present embodiment, the combination of sub-pixelsincluded in one pixel is not limited to a combination of sub-pixels ofthree primary colors of RGB. For example, in one pixel, sub-pixels ofone color or a plurality of colors may further be added to sub-pixels ofthree primary colors. Specifically, for example, in one pixel, asub-pixel that emits white light may be added to sub-pixels of threeprimary colors in order to improve the luminance; or in one pixel, atleast one sub-pixel that emits light of a complementary color may beadded to sub-pixels of three primary colors in order to expand the colorreproduction range. Alternatively, in the display device 1, a sub-pixelmay not exist, and one pixel circuit 210 may correspond to one pixel.Furthermore, alternatively, the display device 1 may not be one capableof color display, and may be one that performs monochrome display.

The scanning unit 30 is placed on one side in the horizontal directionof the pixel unit 20. A plurality of interconnections that are providedto be arranged in the vertical direction extend in the horizontaldirection from the scanning unit 30 toward the pixel unit 20.Specifically, as shown in FIG. 2, the scanning unit 30 includes awriting scanning unit 301, a first driving scanning unit 311, and asecond driving scanning unit 321. A plurality of scanning lines 302extend from the writing scanning unit 301 toward the respective rows ofthe pixel circuits 210, a plurality of first driving lines 312 extendfrom the first driving scanning unit 311 toward the respective rows ofthe pixel circuits 210, and a plurality of second driving lines 322extend from the second driving scanning unit 321 toward the respectiverows of the pixel circuits 210. Each of these plurality ofinterconnections (the scanning lines 302, the first driving lines 312,and the second driving lines 322) is connected to the respective pixelcircuits 210. The writing scanning unit 301, the first driving scanningunit 311, and the second driving scanning unit 321 change the electricpotentials of these plurality of interconnections as appropriate, andthereby control the operation of each pixel circuit 210 so that adesired image can be displayed as the entire display surface. Details ofthe connection state between the scanning line 302, the first drivingline 312, and the second driving line 322, and the pixel circuit 210,and functions of the writing scanning unit 301, the first drivingscanning unit 311, and the second driving scanning unit 321 aredescribed later with reference to FIG. 3.

The selection unit 40 is placed on one side in the vertical direction ofthe pixel unit 20. A plurality of interconnections that are provided tobe arranged in the horizontal direction extend in the vertical directionfrom the selection unit 40 toward the pixel unit 20. Specifically, asshown in FIG. 2, the selection unit 40 includes a signal output unit401. A plurality of signal lines 402 extend from the signal output unit401 toward the respective columns of the pixel circuits 210. Each of theplurality of signal lines 402 is connected to the respective pixelcircuits 210 in the pixel unit 20. The signal output unit 401 changesthe electric potentials of the plurality of signal lines 402 asappropriate, and thereby controls the operation of each pixel circuit210 so that a desired image can be displayed as the entire displaysurface. Details of the connection state between the signal line 402 andthe pixel circuit 210, and functions of the signal output unit 401 aredescribed later with reference to FIG. 3.

Thus, interconnections extending in the horizontal direction from thescanning unit 30 are provided to correspond to the respective rows ofthe pixel circuits 210 arranged in a matrix form, and are connected tothe respective pixel circuits 210. Further, interconnections extendingin the vertical direction from the selection unit 40 are provided tocorrespond to the respective columns of the pixel circuits 210 arrangedin a matrix form, and are connected to the respective pixel circuits210. Then, the electric potentials of these plurality ofinterconnections are changed by the scanning unit 30 and the selectionunit 40 as appropriate, and thereby the operation of each pixel circuitof the pixel unit 20 is controlled.

2. CONFIGURATION OF PIXEL CIRCUIT

The configuration of the pixel circuit 210 shown in FIG. 2 will now bedescribed with reference to FIG. 3. FIG. 3 is a schematic diagramshowing the configuration of the pixel circuit 210 shown in FIG. 2. FIG.3 shows a circuit configuration of one pixel circuit 210 among theplurality of pixel circuits 210 shown in FIG. 2, and shows theconnection state to the pixel circuit 210 of the scanning line 302, thefirst driving line 312, the second driving line 322, and the signal line402.

As shown in FIG. 3, the pixel circuit 210 includes an organic lightemitting diode 211 that is a light emitting element and a drivingcircuit that drives the organic light emitting diode 211 by passing acurrent through the organic light emitting diode 211. The drivingcircuit includes four transistors that are active elements (a drivingtransistor 212, a sampling transistor 213, a light emission controltransistor 214, and a switching transistor 217) and capacitance elements(a holding capacitance 215 and an auxiliary capacitance 216). In thepixel circuit 210, interconnections (the scanning line 302, the firstdriving line 312, the second driving line 322, and the signal line 402mentioned above, a power supply line 332 described later, etc.) areconnected to these elements.

Note that an organic light emitting diode having an ordinary structuremay be used as the organic light emitting diode 211. Further, each ofthe driving transistor 212, the sampling transistor 213, the lightemission control transistor 214, and the switching transistor 217 is aP-channel four-terminal (source/gate/drain/back gate) transistor formedon a semiconductor such as silicon, and the structure may be similar toan ordinary P-channel four-terminal transistor. Therefore, a detaildescription of the structures of the organic light emitting diode 211,the driving transistor 212, the sampling transistor 213, the lightemission control transistor 214, and the switching transistor 217 isomitted herein.

The cathode electrode of the organic light emitting diode 211 isconnected to a common power supply line 331 (electric potential:V_(CATH)) that is provided in common to all the pixel circuits 210 ofthe pixel unit 20. The drain electrode of the driving transistor 212 isconnected to the anode electrode of the organic light emitting diode211.

The drain electrode of the light emission control transistor 214 isconnected to the source electrode of the driving transistor 212, and thesource electrode of the light emission control transistor 214 isconnected to a power supply line 332 (electric potential: V_(cc); V_(cc)being the power supply potential). Further, the gate electrode of thedriving transistor 212 is connected to the drain electrode of thesampling transistor 213, and the source electrode of the samplingtransistor 213 is connected to the signal line 402.

Therefore, by the sampling transistor 213 being brought into aconduction state, an electric potential corresponding to the electricpotential of the signal line 402 is applied to the gate electrode of thedriving transistor 212 (the electric potential of the signal line 402 iswritten), and the driving transistor 212 is brought into a conductionstale. Further, in this event, by the light emission control transistor214 being brought into a conduction state, an electric potentialcorresponding to the signal potential V_(cc) is applied to the sourceelectrode of the driving transistor 212, and a drain-source currentI_(ds) is generated in the driving transistor 212; thus, the organiclight emitting diode 211 is driven. In this event, the magnitude of thedrain-source current I_(ds) changes in accordance with the gatepotential V_(g) of the driving transistor 212, and therefore theemission luminance of the organic light emitting diode 211 is controlledin accordance with the gate potential V_(g) of the driving transistor212, that is, the electric potential of the signal line 402 written bythe sampling transistor 213.

Thus, the driving transistor 212 has the function of causing the organiclight emitting diode 211 to be driven by the drain-source current I_(ds)of the driving transistor 212. Further, the sampling transistor 213controls the gate voltage of the driving transistor 212 in accordancewith the electric potential of the signal line 402, that is, controlsthe on/off of the driving transistor 212; thus, the sampling transistor213 has the function of writing the electric potential of the signalline 402 on the pixel circuit 210 (that is, has the function of samplinga pixel circuit 210 to write the electric potential of the signal line402 on). Further, the light emission control transistor 214 controls theelectric potential of the source electrode of the driving transistor212, and thereby controls the drain-source current I_(ds) of the drivingtransistor 212; thus, the light emission control transistor 214 has thefunction of controlling the light emission/non-light emission of theorganic light emitting diode 211.

The holding capacitance 215 is connected between the gate electrode ofthe driving transistor 212 (that is, the drain electrode of the samplingtransistor 213) and the source electrode of the driving transistor 212.That is, the holding capacitance 215 holds the gate-source voltageV_(gs) of the driving transistor 212. The auxiliary capacitance 216 isconnected between the source electrode of the driving transistor 212 andthe power supply line 332. The auxiliary capacitance 216 has the actionof suppressing the source potential of the driving transistor 212varying when the electric potential of the signal line 402 is written.

The signal output unit 401 controls the electric potential of the signalline 402 (a signal line voltage Date) as appropriate, and thereby writesthe electric potential of the signal line 402 on the pixel circuit 210(specifically, as described above, the electric potential of the signalline 402 is written on a pixel circuit 210 selected by the samplingtransistor 213). In the present embodiment, the signal output unit 401selectively outputs a signal voltage V_(sig) corresponding to a videosignal, a first reference voltage V_(ref), and a second referencevoltage V_(ofs) via the signal line 402. Here, the first referencevoltage V_(ref) is a reference voltage for causing the organic lightemitting diode 211 to be extinguished reliably. Further, the secondreference voltage V_(ofs) is a voltage serving as a reference of thesignal voltage V_(sig) corresponding to a video signal (for example, avoltage equivalent to the black level of a video signal), and is usedwhen performing a threshold correction operation described later.

The scanning line 302 is connected to the gate electrode of the samplingtransistor 213. The writing scanning unit 301 controls the on/off of thesampling transistor 213 by changing the electric potential of thescanning line 302 (a scanning line voltage WS), and executes theprocessing of writing the electric potential of the signal line 402described above (for example, the signal voltage V_(sig) correspondingto a video signal) on the pixel circuit 210. In practice, as describedwith reference to FIG. 2, a plurality of scanning lines 302 are extendedto the respective rows of a plurality of pixel circuits 210 arranged ina matrix form. When writing the electric potential of the signal line402 on each pixel circuit 210, the writing scanning unit 301sequentially supplies the scanning line voltage WS of a prescribed valueto the plurality of scanning lines 302, and thereby scans the pixelcircuits 210 on a row basis one after another.

Note that, also for the signal line 402, in practice a plurality ofsignal lines 402 are extended to the respective columns of a pluralityof pixel circuits 210 arranged in a matrix form, as described withreference to FIG. 2. The signal voltage V_(sig) corresponding to a videosignal, the first reference voltage V_(ref), and the second referencevoltage V_(ofs), which are alternatively outputted from the signaloutput unit 401, are written on the pixel circuits 210 via the pluralityof signal lines 402, in units of pixel rows selected by scanning by thewriting scanning unit 301. That is, the signal output unit 401 writesthe electric potential of the signal line 402 on a row basis.

The first driving line 312 is connected to the gate electrode of thelight emission control transistor 214. The first driving scanning unit311 controls the on/off of the light emission control transistor 214 bychanging the electric potential of the first driving line 312 (a firstdriving line voltage DS), and executes the processing of controlling thelight emission/non-light emission of the organic light emitting diode211 described above. In practice, as described with reference to FIG. 2,a plurality of first driving lines 312 are extended to the respectiverows of a plurality of pixel circuits 210 arranged in a matrix form. Insynchronization with scanning by the writing scanning unit 301, thefirst driving scanning unit 311 sequentially supplies the first drivingline voltage DS of a prescribed value to the plurality of first drivinglines 312, and thereby controls the light emission/non-light emission ofeach pixel circuit 210 as appropriate.

Here, further, in the pixel circuit 210, the source electrode of theswitching transistor 217 is connected to the anode electrode of theorganic light emitting diode 211. The drain electrode of the switchingtransistor 217 is connected to a ground line 333 (electric potential:V_(ss); V_(ss) being the ground potential). A current flowing throughthe driving transistor 212 during the non-light emission period of theorganic light emitting diode 211 flows through the ground line 333 bymeans of a current path formed by the switching transistor 217.

Here, as described later, when driving the pixel circuit 210 accordingto the present embodiment, a threshold correction operation thatcorrects the threshold voltage V_(th) of the driving transistor 212 isperformed, and further a threshold correction preparation operation isperformed as a pre-stage for performing the threshold correctionoperation. In the threshold correction preparation operation, anoperation that initializes the gate potential V_(g) and the sourcepotential V_(s) of the driving transistor 212 is performed, andconsequently the gate-source voltage V_(gs) of the driving transistor212 becomes larger than the threshold voltage V_(th) of the drivingtransistor 212. This is because, if the gate-source voltage V_(gs) ofthe driving transistor 212 is not set larger than the threshold voltageV_(th) of the driving transistor 212, the threshold correction operationcannot be performed properly.

Therefore, if the operation that initializes the gate potential V_(g)and the source potential V_(s) of the driving transistor 212 mentionedabove is performed, a situation where the anode potential V_(ano) of theorganic light emitting diode 211 exceeds the threshold voltage V_(thel)of the organic light emitting diode 211 in spite of the non-lightemission period of the organic light emitting diode 211 may occur.Consequently, a current flows into the organic light emitting diode 211from the driving transistor 212, and a phenomenon in which the organiclight emitting diode 211 emits light in spite of the non-light emissionperiod occurs.

Thus, in the present embodiment, a current circuit using the switchingtransistor 217 described above is provided in order to prevent such aphenomenon. Thereby, the current from the driving transistor 212mentioned above does not flow into the organic light emitting diode 211but flows into this current circuit, and unintentional light emission ofthe organic light emitting diode 211 can be prevented.

The second driving line 322 is connected to the gate electrode of theswitching transistor 217. The second driving scanning unit 321 controlsthe on/off of the switching transistor 217 by changing the electricpotential of the second driving line 322 (a second driving line voltageAZ). Specifically, the second driving scanning unit 321 changes thesecond driving line voltage AZ as appropriate, and thereby sets theswitching transistor 217 in a conduction state and opens the currentcircuit described above during a light-emission-receiving period, morespecifically, at least during a period in which the gate-source voltageV_(gs) of the driving transistor 212 is set larger than the thresholdvoltage V_(th) of the driving transistor 212 by performing the thresholdcorrection preparation operation. In practice, as described withreference to FIG. 2, a plurality of second driving lines 322 areextended to the respective rows of a plurality of pixel circuits 210arranged in a matrix form. The second driving scanning unit 321sequentially supplies the second driving line voltage AZ of a prescribedvalue to the plurality of second driving lines 322 in synchronizationwith scanning by the writing scanning unit 301, and thereby controls thedriving of the switching transistor 217 so that the switching transistor217 is in a conduction state during the period mentioned above, asappropriate.

Note that the writing scanning unit 301, the first driving scanning unit311, the second driving scanning unit 321, and the signal output unit401 can be obtained using known techniques by means of various circuitscapable of achieving the functions described above, such as a shiftregister circuit, and therefore a description of detailed circuitconfigurations of these units is omitted herein.

Hereinabove, the configuration of the pixel circuit 210 according to thepresent embodiment is described.

3. OPERATION OF PIXEL CIRCUIT

The operation of the pixel circuit 210 described hereinabove will now bedescribed. FIG. 4 is a diagram for describing the operation of the pixelcircuit 210 according to the present embodiment. FIG. 4 shows a timingwaveform diagram of signals related to the operation of the pixelcircuit 210. Specifically, FIG. 4 shows manners of changes in onehorizontal period (one H-period) of the electric potential of the signalline 402 (the signal line voltage Date), the electric potential of thescanning line 302 (the scanning line voltage WS), the electric potentialof the first driving line 312 (the first driving line voltage DS), theelectric potential of the second driving line 322 (the second drivingline voltage AZ), the source potential V_(s) of the driving transistor212, and the gate potential V_(g) of the driving transistor 212.

It is noted that, since each of the sampling transistor 213, the lightemission control transistor 214, and the switching transistor 217 is ofa P-channel type, these transistors are in an ON state, that is, aconduction state when the scanning line voltage WS, the first drivingline voltage DS, and the second driving line voltage AZ are in a lowelectric potential state, respectively, and these transistors are in anoff state, that is, a non-conduction state when the scanning linevoltage WS, the first driving line voltage DS, and the second drivingline voltage AZ are in a high electric potential state, respectively.Also for the driving transistor 212, similarly, the driving transistor212 is in a conduction state in a case where the gate potential V_(g) isa low electric potential, and the driving transistor 212 is in anon-conduction state in a case where the gate potential V_(g) is a highelectric potential. Further, as described above, any of the signalvoltage V_(sig) corresponding to a video signal, the first referencevoltage V_(ref), and the second reference voltage V_(ofs) isalternatively selected for the signal line voltage Date. In the waveformdiagram shown in FIG. 4, V_(ref)=V_(cc) (the power supply potential), asan example.

At the time of the ending of a light emission period of the organiclight emitting diode 211, the scanning line voltage WS transitions froma high electric potential to a low electric potential, and the samplingtransistor 213 is brought into a conduction state (time t₁). On theother hand, at time t₁, the signal line voltage Date is in a state ofbeing controlled to the first reference voltage V_(ref). Therefore, bythe transition of the scanning line voltage WS from a high electricpotential to a low electric potential, the gate-source voltage V_(gs) ofthe driving transistor 212 becomes less than or equal to the thresholdvoltage V_(th) of the driving transistor 212, and thus the drivingtransistor 212 is cut off. If the driving transistor 212 is cut off, thepath of current supply to the organic light emitting diode 211 is cutoff, and therefore the anode potential V_(amo) of the organic lightemitting diode 211 decreases gradually. With time, if the anodepotential V_(ano) becomes less than or equal to the threshold voltageV_(thel) of the organic light emitting diode 211, the organic lightemitting diode 211 enters a light extinction state completely (theperiod of time t₁ to time t₂; a light extinction period).

Subsequently to the light extinction period, a period in which apreparation operation (a threshold correction preparation operation)before performing a threshold correction operation described later isperformed is provided (the period of time t₂ to time t₃; a thresholdcorrection preparation period). Specifically, at time t₂, which is atiming at which the threshold correction preparation period is started,the scanning line voltage WS transitions from a high electric potentialto a low electric potential, and thereby the sampling transistor 213enters a conduction state. On the other hand, at time t₂, the signalline voltage Date is in a state of being controlled to the secondreference voltage V_(ofs). By the sampling transistor 213 entering aconduction state in a state where the signal line voltage Date is thesecond reference voltage V_(ofs), the gate potential V_(g) of thedriving transistor 212 becomes the second reference voltage V_(ofs).

Further, at time t₂, the first driving line voltage DS is in a lowelectric potential state, and the light emission control transistor 214is set in a conduction state. Therefore, the source potential V_(s) ofthe driving transistor 212 is the power supply voltage V_(cc). In thisevent, the gate-source voltage V_(gs) of the driving transistor 212 isV_(gs)=V_(ofs)−V_(cc).

Here, to perform the threshold correction operation, it is necessarythat the gate-source voltage V_(gs) of the driving transistor 212 be setlarger than the threshold voltage V_(th) of the driving transistor 212.Hence, each voltage value is set such that|V_(g)|=|V_(ofs)−V_(cc)|>|V_(th)|.

Thus, the initialization operation that sets the gate potential V_(g) ofthe driving transistor 212 to the second reference voltage V_(ofs) andsets the source potential V_(s) of the driving transistor 212 to thepower supply voltage V_(cc) is the threshold correction preparationoperation. That is, the second reference voltage V_(ofs) and the powersupply voltage V_(cc) are the initialization voltages of the gatepotential V_(g) and the source potential V_(s) of the driving transistor212, respectively.

If the threshold correction preparation period ends, next, the thresholdcorrection operation that corrects the threshold voltage V_(th) of thedriving transistor 212 is performed (the period of time t₃ to time t₄; athreshold correction period). In the period in which the thresholdcorrection operation is performed, first, at time t₃, which is thetiming at which the threshold correction period is started, the firstdriving line voltage DS transitions from a low electric potential to ahigh electric potential, and the light emission control transistor 214enters a non-conduction state. Thereby, the source potential V_(s) ofthe driving transistor 212 enters a floating state. On the other hand,at time t₃, the scanning line voltage WS is in a state of beingcontrolled to a high electric potential, and the sampling transistor 213is in a non-conduction state. Therefore, at time t₃, also the gatepotential V_(g) of the driving transistor 212 is in a floating state,and the source electrode and the gate electrode of the drivingtransistor 212 enter a state of being connected together via the holdingcapacitance 215, in a state of floating with each other. Thereby, asillustrated, the source potential V_(s) and the gate potential V_(g) ofthe driving transistor 212 gradually change to prescribed values inaccordance with the threshold voltage V_(th) of the driving transistor212.

Thus, the operation that, using the initialization voltage V_(ofs) ofthe gate potential V_(g) of the driving transistor 212 and theinitialization voltage V_(cc) of and the source potential V_(s) of thedriving transistor 212 as references, changes the source potential V_(s)and the gate potential V_(g) of the driving transistor 212 to prescribedvalues in accordance with the threshold voltage V_(th) of the drivingtransistor 212, in a floating state, is the threshold correctionoperation. If the threshold correction operation progresses, thegate-source voltage V_(gs) of the driving transistor 212 stabilizes tothe threshold voltage V_(th) of the driving transistor 212 with time. Avoltage equivalent to the threshold voltage V_(th) is held in theholding capacitance 215.

Here, as a matter of course, a design value exists for the thresholdvoltage V_(th) of the driving transistor 212; however, due tomanufacturing variations etc., the actual threshold voltage V_(th) doesnot always coincide with the design value. In this regard, by performinga threshold correction operation like the above, a voltage equivalent tothe actual threshold voltage V_(th) can be caused to be held in theholding capacitance 215 before the organic light emitting diode 211 iscaused to emit light. Thereby, after that, when causing the drivingtransistor 212 to be driven in order to cause the organic light emittingdiode 211 to emit light, a variation in the threshold voltage V_(th) ofthe driving transistor 212 can be canceled, as described later.Therefore, the driving of the driving transistor 212 can be controlledwith better precision, and a desired luminance can be obtained morefavorably.

If the threshold correction period ends, next, a signal writingoperation that writes the signal voltage V_(sig) corresponding to avideo signal is performed (the period of time t₄ to time t₅; a signalwriting period). In the signal writing period, at time t₄, which is thetiming at which the signal writing period is started, the scanning linevoltage WS transitions from a high electric potential to a low electricpotential, and the sampling transistor 213 is brought into a conductionstate. On the other hand, at time t₄, the signal line voltage Date is ina state of being controlled to the signal voltage V_(sig) in accordancewith a video signal, and therefore the signal voltage V_(sig) inaccordance with a video signal is written on the holding capacitance215. When writing the signal voltage V_(sig) corresponding to a videosignal, the auxiliary capacitance 216 connected between the sourceelectrode of the driving transistor 212 and the power supply line 332plays the role of suppressing the variation in the source potentialV_(s) of the driving transistor 212. Then, at the time when the signalvoltage V_(sig) in accordance with a video signal is written, that is,at the time when the signal voltage V_(sig) in accordance with a videosignal is applied to the gate electrode of the driving transistor 212and the driving transistor 212 is driven, the threshold voltage V_(th)of the driving transistor 212 is canceled by the voltage equivalent tothe threshold voltage V_(th) that is held in the holding capacitance 215as a result of the threshold correction operation. That is, by havingperformed the threshold correction operation mentioned above, thevariation in the threshold voltage V_(th) of the driving transistor 212between pixel circuits 210 is canceled.

At time t₅, the scanning line voltage WS transitions from a low electricpotential to a high electric potential, and the sampling transistor 213is brought into a non-conduction state; thereby, the signal writingperiod ends. If the signal writing period ends, next, a light emissionperiod is started from time t₆. At time t₆, which is the timing at whichthe light emission period is started, the first driving line voltage DStransitions from a high electric potential to a low electric potential,and thereby the light emission control transistor 214 is brought into aconduction state. Thus, a current is supplied from the power supply line332 having the power supply voltage V_(cc) to the source electrode ofthe driving transistor 212 via the light emission control transistor214.

In this event, due to the fact that the sampling transistor 213 is in anon-conduction state, the gate electrode of the driving transistor 212is electrically separated from the signal line 402, and is in a floatingstate. When the gate electrode of the driving transistor 212 is in afloating state, the holding capacitance 215 is connected between thegate and the source of the driving transistor 212, and thereby the gatepotential V_(g) varies in conjunction with the variation in the sourcepotential V_(s) of the driving transistor 212. That is, the sourcepotential V_(s) and the gate potential V_(g) of the driving transistor212 rise while holding the gate-source voltage V_(gs) held in theholding capacitance 215. Then, the source potential V_(s) of the drivingtransistor 212 rises up to a light emission voltage V_(oled) of theorganic light emitting diode 211 in accordance with the saturationcurrent of the transistor.

The operation in which the gate potential V_(g) of the drivingtransistor 212 varies in conjunction with the variation in the sourcepotential V_(s) in this way is referred to as a bootstrap operation. Inother words, the bootstrap operation is an operation in which the gatepotential V_(g) and the source potential V_(s) of the driving transistor212 vary while holding the gate-source voltage V_(gs) held in theholding capacitance 215, that is, the voltage between both ends of theholding capacitance 215.

Then, the drain-source current I_(ds) of the driving transistor 212begins to flow through the organic light emitting diode 211, and therebythe anode potential V_(ano) of the organic light emitting diode 211rises in accordance with the drain-source current I_(ds). With time, ifthe anode potential of the organic light emitting diode 211 exceeds thethreshold voltage V_(thel) of the organic light emitting diode 211, adriving current begins to flow through the organic light emitting diode211, and the organic light emitting diode 211 starts light emission.

The operations described hereinabove are executed in each pixel circuit210 within one H-period. Note that, as described above, the switchingtransistor 217 is one for preventing unintentional light emission of theorganic light emitting diode 211 that occurs due to a current flowingfrom the driving transistor 212 toward the organic light emitting diode211 in the non-light emission period; hence, the second driving linevoltage AZ is controlled so that the switching transistor 217 is in aconduction state in the non-light emission period, as appropriate. Inthe shown example, at time t₁ at which a light emission period ends, thesecond driving line voltage AZ transitions from a high electricpotential to a low electric potential; and immediately before time t₆ atwhich the next light emission period is ended or started, the seconddriving line voltage AZ transitions from a low electric potential to ahigh electric potential.

Note that, in regard to the overall configuration of the display device1, the configuration of the pixel circuit 210, and the operation of thepixel circuit 210 according to the present embodiment describedhereinabove, Patent Literature 1 above, which is a prior application bythe present applicant, may be referred to except for the respectsdescribed later in (4-2. Layout according to present embodiment) below.In other words, the overall configuration of the display device 1, theconfiguration of the pixel circuit 210, and the operation of the pixelcircuit 210 according to the present embodiment may be similar to thosedescribed in Patent Literature 1 above except for the respects describedlater in (4-2. Layout according to present embodiment) below. However,what is described hereinabove is only an example, and the presentembodiment is not limited to this example. It is sufficient that therespects described later in (4-2. Layout according to presentembodiment) below be reflected in the display device 1 according to thepresent embodiment, and various known configurations used in ordinarydisplay devices may be used for the other respects

4. LAYOUT OF PIXEL CIRCUITS

A layout of a diffusion layer that is a layer in which the transistorsof pixel circuits 210 according to the present embodiment describedhereinabove are formed will now be described. Herein, first, an ordinaryexisting layout is described in order to make the effect obtained by thelayout according to the present embodiment clearer.

4-1. Ordinary Layout

A case where the diffusion layer of pixel circuits 210 according to thepresent embodiment has an ordinary layout will now be considered. FIG. 5is a top view schematically showing an example of an ordinary layout ina case where the diffusion layer of pixel circuits 210 according to thepresent embodiment has the ordinary layout. In practice, a plurality ofsub-pixels (that is, pixel circuits 210) are placed to be arranged in amatrix form in the pixel unit 20 of the display device 1; but FIG. 5shows a layout of pixel circuits 210 corresponding to adjacent threesub-pixels (PIX_A, PIX_B, and PIX_C), for the sake of description.

In the pixel circuit 210 according to the present embodiment, eachtransistor of the pixel circuit 210 is formed on a silicon substrate(the pixel circuit 210 is formed on what is called a silicon backplane). In FIG. 5, the layout of the diffusion layer is shown in asimplified manner; in the diffusion layer, active areas corresponding toa source region and a drain region of each transistor included in thepixel circuit 210 and a gate region functioning as the gate electrode ofeach transistor are expressed by mutually different types of hatching.In the drawing, the region not hatched with dots in the sub-pixel is,for example, an isolation region in which an oxide is formed by any ofvarious known methods such as shallow trench isolation (STI) and localoxidation of silicon (LOCOS).

In each sub-pixel, region 221 that is the drain region of the drivingtransistor 212 and furthermore corresponds to the source region of theswitching transistor 217 is a region where the anode electrode of theorganic light emitting diode 211, which is formed on the upper side ofthe shown transistor layer, is connected (see also FIG. 3 describedabove). Hereinafter, region 221 may be referred to as an anode region221 for the sake of convenience. Further, region 222 corresponding tothe drain region of the sampling transistor 213 of PIX_B among thesesub-pixels is a region where the gate electrode of the drivingtransistor is connected (see also FIG. 3 described above). Hereinafter,region 222 may he referred to as a gate region 222 for the sake ofconvenience.

Further, an electricity supply region 223 that is an active area forsupplying an electric potential to wells is provided in PIX_C among thethree sub-pixels. The electric potentials of the wells in thesesub-pixels are the same; hence, in the ordinary layout, electricitysupply regions 223 may be provided at a ratio of one to severalsub-pixels, as illustrated.

The influence that the operation of the pixel circuit 210 of PIX_A giveson the operation of the pixel circuit 210 of the adjacent PIX_B in thislayout will now be considered. In the example of the layout shown inFIG. 5, the anode region 221 of PIX_A and the gate region 222 of PIX_Bare located at a relatively near distance. Therefore, as illustrated, aparasitic capacitance C_(p) can exist between both. In a case where theparasitic capacitance C_(p) exists, there is a concern that theoperation of the pixel circuit 210 of PIX_B will not be performedproperly, due to the parasitic capacitance C_(p).

FIG. 6 is a timing waveform diagram when pixel circuits 210 operate in acase where the ordinary layout shown in FIG. 5 is used. FIG. 6 mainlyshows a timing waveform diagram corresponding to the signal writingperiod to the light emission period described with reference to FIG. 4.FIG. 6 shows, for the sake of description, waveforms of the scanningline voltage WS, the first driving line voltage DS, the gate potential(Gate) and the source potential (Source) of the driving transistor 212,and the electric potential (Anode) of the anode region 221 (this is theanode potential of the organic light emitting diode 211 and is equal tothe drain potential of the driving transistor 212) of PIX_B, andwaveforms of the gate potential (Gate) and the source potential (Source)of the driving transistor 212 and the electric potential (Anode) of theanode region 221 of PIX_A.

Referring to FIG. 6, the signal voltage V_(sig) corresponding to a videosignal is written in the signal writing period, then the first drivingline voltage DS transitions from a high electric potential to a lowelectric potential, and thereby the state shifts to the light emissionperiod. In this event, as described above, both the gate potential andthe source potential of the driving transistor 212 rise up to prescribedvalues by the bootstrap operation.

Here, if the parasitic capacitance C_(p) described above exists betweenthe anode region 221 of PIX_A and the gate region 222 of PIX_B, thevariation in the electric potential of the anode region 221 of PIX_Ainfluences the gate region 222 of PIX_B via the parasitic capacitanceC_(p). Specifically, if the parasitic capacitance of the gate region 222of PIX_B is denoted by C_(p) _(_) _(b) and the variation in the electricpotential of the anode region 221 of PIX_A is denoted by ΔV_(ano), theamount of variation in the electric potential of the gate region 222 ofPIX_B, ΔV_(B), is expressed by Mathematical Formula (1) below.

[Math.  1]                                        $\begin{matrix}{{\Delta \; V_{B}} = {\Delta \; V_{ano} \times \frac{C_{p}}{C_{p} + C_{p\_ b}}}} & (1)\end{matrix}$

That is, the electric potential of the gate region 222, that is, thegate potential of the driving transistor 212 of PIX_B deviates by ΔV_(B)from the value that should originally be set, due to the influence ofthe variation in the electric potential of the anode region 221 of PIX_Avia the parasitic capacitance C_(p). In FIG. 6, for the gate potentialof the driving transistor 212 of PIX_B, curve T indicating a desiredelectric potential and curve F indicating an electric potential deviatedby ΔV_(B) are simulatively shown. If in this way the gate potential ofthe driving transistor 212 of PIX_B deviates by ΔV_(B), also thegate-source voltage V_(gs) of the driving transistor 212 of PIX_Bdeviates by ΔV_(B). Therefore, also the drain-source current I_(ds) ofthe driving transistor 212 deviates from the original design value, anda desired luminance is not obtained for the organic light emitting diode211 of FIX_B.

As described hereinabove, in a case where the ordinary layout is usedfor the diffusion layer, a parasitic capacitance C_(p) can occur betweenactive areas of adjacent pixel circuits 210. Then, there is a concernthat, by coupling via the parasitic capacitance C_(p), the operation ofa pixel circuit 210 will influence the operation of an adjacent otherpixel circuit 210. Therefore, a desired luminance is not obtained as apixel, and display quality may be reduced. Note that, although hereininterference between PIX_A and PIX_B is described as an example, asimilar phenomenon can occur also between PIX_B and PIX_C, and furtherbetween not-shown other adjacent sub-pixels, as a matter of course.

4-2. Layout According to Present Embodiment

In the present embodiment, the trouble that may occur in the ordinarylayout described hereinabove can be solved by modifying the layout. Alayout of a diffusion layer of pixel circuits 210 according to thepresent embodiment will now be described with reference to FIG. 7. FIG.7 is a top view schematically showing an example of a layout of adiffusion layer of pixel circuits 210 according to the presentembodiment.

FIG. 7 shows, similarly to FIG. 5, a layout of pixel circuits 210corresponding to adjacent three sub-pixels (PIX_A, PIX_B, and PIX_C).Further, in FIG. 7, like in FIG. 5, the layout of the diffusion layer isshown in a simplified manner, and active areas corresponding to a sourceregion and a drain region of each transistor included in the pixelcircuit 210 and a gate region functioning as the gate electrode of eachtransistor are expressed by mutually different types of hatching. In thedrawing, the region not hatched with dots in the sub-pixel is anisolation region.

Referring to FIG. 7, in the layout of the diffusion layer according tothe present embodiment, the layout of transistors may be similar to theordinary layout shown in FIG. 5. However, in the present embodiment, thearrangement of electricity supply regions 223 is different from theordinary layout.

Specifically, in the present embodiment, the electricity supply region223 is provided in each sub-pixel as shown in FIG. 7. Then, in eachsub-pixel, the electricity supply region 223 is provided in a partbetween adjacent sub-pixels where active areas are proximate, that is, apart where a parasitic capacitance C_(p) is likely to occur. In theshown example, the electricity supply region 223 is provided between theanode region 221 of a sub-pixel and the gate region 222 of an adjacentsub-pixel (for example, between the anode region 221 of PIX_A and thegate region 222 of PIX_B, etc.), where a parasitic capacitance C_(p)could occur in the ordinary layout. In this layout, the electricitysupply region 223 plays the role of a shield; therefore, the occurrenceof a parasitic capacitance C_(p) between active areas of adjacent pixelcircuits 210 is suppressed, and the influence that the operation of apixel circuit 210 gives on the operation of an adjacent other pixelcircuit 210 can be lessened. Thus, a desired luminance is obtained foreach sub-pixel, and display quality can be improved.

Note that, since the electricity supply region 223 is originallyprovided in order to supply an electric potential to wells, in thepresent embodiment it is not necessary to newly provide a dedicatedconfiguration for a shield. Therefore, the effect of a shield can beobtained between adjacent pixel circuits 210 without increasing the areaof the pixel circuit 210. Further, since it is not necessary to newlyprovide a dedicated configuration for a shield, it is not necessary to,for example, newly fabricate a mask or add a process for the effect of ashield, and accordingly an increase in manufacturing cost is not caused.Thus, according to the present embodiment, the effect of a shield can beobtained more efficiently from the viewpoint of the area of the pixelcircuit 210, further from the viewpoint of cost. Further, since displayquality can be improved without increasing the area of the pixel circuit210 as mentioned above, the display device 1 can be used favorably as adisplay device that downsizing is required of, for example as a displaydevice to be mounted on a wearable device or the like.

FIG. 8 is a timing waveform diagram when pixel circuits 210 operate in acase where the layout according to the present embodiment shown in FIG.7 is used. FIG. 8 mainly shows, similarly to FIG. 6, a timing waveformdiagram in the signal writing period to the light emission period. FIG.8 shows, similarly to FIG. 6, waveforms of the scanning line voltage WS,the first driving line voltage DS, the gate potential (Gate) and thesource potential (Source) of the driving transistor 212, and theelectric potential (Anode) of the anode region 221 of PIX_B, andwaveforms of the gate potential (Gate) and the source potential (Source)of the driving transistor 212 and the electric potential (Anode) of theanode region 221 of PIX_A.

In the present embodiment, the electricity supply region 223 is providedbetween the anode region 221 of PIX_A and the gate region 222 of PIX_Bas shown in FIG. 7, and thereby interference via a parasitic capacitanceC_(p) between both is suppressed. Therefore, as shown in FIG. 8, duringthe time when the state shifts from the signal writing period to thelight emission period and both the gate potential and the sourcepotential of the driving transistor 212 rise up to prescribed values bythe bootstrap operation, the gate potential of the driving transistor212 of PIX_B can be controlled to a desired value, with little influenceof the change in the electric potential of the anode region 221 of PIX_Aon the change in the electric potential of the gate region 222 of PIX_B(that is, the gate potential of the driving transistor 212 of PIX_B).Therefore, also the gate-source voltage V_(gs) and the drain-sourcecurrent I_(ds) of the driving transistor 212 of PIX_B can be controlledto desired values with better precision, and a desired luminance can beobtained for the organic light emitting diode 211 of PIX_B.

Here, in the ordinary layout shown in FIG. 5, electricity supply regions223 are provided at a ratio of one to a plurality of sub-pixels. In thislayout, there is a concern that a potential gradient will occur in wellpotential in the pixel unit 20, that is, the display surface. If such apotential gradient occurs, a difference occurs in well potential betweensub-pixels, and consequently uniformity failure such as luminanceunevenness may be caused. In contrast, in the present embodiment, theelectricity supply region 223 is provided in each sub-pixel as describedabove, and electricity supply to the well is performed for eachsub-pixel. Therefore, a potential gradient of well potential in thedisplay surface is less likely to occur, and substantially the same wellpotential can be obtained in the sub-pixels. Thus, the occurrence ofuniformity failure like the above can be suppressed, and furtherimprovement in display quality can be achieved.

Note that the layout shown in FIG. 7 is only an example, and the presentembodiment is not limited to this example. As long as the electricitysupply region 223 is provided between adjacent sub-pixels (that is,between pixel circuits 210), the shield effect of the electricity supplyregion 223 can be exhibited, and interference between sub-pixels can besuppressed. Thus, in the present embodiment, it is sufficient that theelectricity supply region 223 be provided between adjacent sub-pixels;and the number and arrangement of electricity supply regions 223 and theshape, area, etc. of the electricity supply region 223 may be determinedas appropriate. In practice, the number of transistors and the size ofeach transistor vary and also the layout of the diffusion layer oftransistors varies in accordance with the configuration of the pixelcircuit. Thus, the number and arrangement of electricity supply regions223 and the shape, area, etc. of the electricity supply region 223 maybe determined on the basis of the configuration of the pixel circuit210, the layout of transistors determined in accordance with thisconfiguration, etc. in such a manner that an effect as a shield isexhibited more effectively and interference between adjacent pixelcircuits 210 can be suppressed favorably, as appropriate. An appropriatenumber and arrangement of electricity supply regions 223 and anappropriate shape, area, etc. of the electricity supply region 223 forobtaining an effect as a shield effectively may be determined by, forexample, repeating simulation or trial manufacture, as appropriate.

For example, as an example of the arrangement of electricity supplyregions 223 other than the arrangement shown in FIG. 7, the electricitysupply region 223 may be provided along the boundary between adjacentsub-pixels, as a region having a long-length shape in the direction ofthe boundary line. In this event, the electricity supply region 223 maybe provided in each sub-pixel (that is, independently for eachsub-pixel) along the boundary line between sub-pixels, or may beprovided on the boundary line between sub-pixels. In a case of beingprovided on the boundary line between sub-pixels, the electricity supplyregion 223 is shared by adjacent sub-pixels. Alternatively, theelectricity supply region 223 may, instead of being provided only on oneside of each sub-pixel, be provided in an outer edge portion of eachsub-pixel so as to surround the sub-pixel. Also in this case, theelectricity supply region 223 may be provided independently for eachsub-pixel along the boundary line between sub-pixels, or the electricitysupply region 223 may be shared by adjacent sub-pixels by theelectricity supply region 223 being provided on the boundary linebetween sub-pixels.

Note that, in a case where, as mentioned above, the electricity supplyregion 223 is provided along the boundary between adjacent sub-pixels orthe electricity supply region 223 is provided so as to surround eachsub-pixel, it is feared that the area of the electricity supply region223 will be increased and also the area of the pixel circuit 210 will beincreased. Such a situation is not preferable in a small-sized displaydevice 1 that area reduction of the pixel circuit 210 is required of,for example in a display device to be mounted on a wearable device orthe like. Thus, in a case where it is desired to avoid arrangement oflarge-area electricity supply regions 223, an electricity supply region223 with the minimum area by which an effect as a shield is obtained maybe placed in a position whereby interference between adjacent sub-pixelscan be suppressed favorably, such as a part between adjacent pixelswhere a parasitic capacitance C_(p) is likely to occur, as appropriate.

Note that, if attention is focused only on the obtainment of the effectof suppressing interference between adjacent sub-pixels, the electricitysupply region 223 may not necessarily be provided in each sub-pixel on aone-to-one basis. By not providing the electricity supply region 223 ineach sub-pixel on a one-to-one basis, the effect of making the area ofthe sub-pixel smaller is obtained. However, in view of the original roleof supplying an electric potential to the well, it is preferable that,as described above, the electricity supply region 223 be provided ineach sub-pixel at least on a one-to-one basis, in order to improvedisplay quality.

Alternatively, a plurality of electricity supply regions 223 may beprovided in one sub-pixel. For example, in a case where, as mentionedabove, an electricity supply region 223 functioning as a shield isformed with a relatively small area for the purpose of making the areaof the pixel circuit 210 smaller, there is a concern that the supply ofan electric potential to the well cannot be performed stably, due to thefact that the area of the electricity supply region 223 is notsufficiently large. In such a case, an electricity supply region 223that plays the original role of supplying an electric potential to thewell may be further provided in a surplus area in the sub-pixel,separately from the electricity supply region 223 functioning as ashield. Thus, it is preferable that, while the achievement of a functionas a shield and the achievement of the function of stably supplying anelectric potential to the well are considered comprehensively, thenumber and arrangement of electricity supply regions 223 and the shape,area, etc. of the electricity supply region 223 be determined such thatthe area of the pixel circuit 210 is smaller, as appropriate.

5. SPECIFIC CONFIGURATION EXAMPLE OF DISPLAY DEVICE

A more specific configuration example of the display device 1 accordingto the present embodiment described hereinabove will now be described.FIG. 9 is a cross-sectional view showing a specific configurationexample of the display device 1 according to the present embodiment.FIG. 9 shows a partial cross-sectional view of the display device 1.

Referring to FIG. 9, the display device 1 according to the presentembodiment includes, on a first substrate 11, a plurality of organiclight emitting diodes 211 each of which is a light emitting element thatemits white light and a CF layer 33 that is provided on the organiclight emitting diodes 211 and in which color filters (CFs) of somecolors are formed to correspond to the organic light emitting diodes211. Further, a second substrate 34 that contains a material transparentto light from the organic light emitting diode 211 is placed on the CFlayer 33. Further, on the first substrate 11, thin film transistors(TFTs) 15 for driving the organic light emitting diode 211 are providedto correspond to each of the organic light emitting diodes 211. The TFT15 corresponds to each of the transistors included in the pixel circuitdescribed above (the driving transistor 212, the sampling transistor213, the light emission control transistor 214, and the switchingtransistor 217). An arbitrary organic light emitting diode 211 isselectively driven by the TFTs 15; light from the driven organic lightemitting diode 211 passes through the corresponding CF and the color ofthe light is converted as appropriate; and the light is emitted from theupper side via the second substrate 34; thereby, a desired image, adesired character, etc. are displayed.

Note that, in the following description, the stacking direction of thelayers in the display device 1 is referred to also as an up and downdirection. In this event, the side on which the first substrate 11 isplaced is defined as a down side, and the side on which the secondsubstrate 34 is placed is defined as an up side. Further, a planeperpendicular to the up and down direction is referred to also as ahorizontal plane.

Thus, the display device 1 shown in FIG. 9 is a top emission displaydevice capable of color display that is driven by an active matrixsystem. However, the present embodiment is not limited to this example,and the display device 1 according to the present embodiment may be abottom emission display device that emits light via the first substrate11.

(First Substrate and Second Substrate)

In the illustrated configuration example, the first substrate 11includes a silicon substrate. Further, the second substrate 34 containsquartz glass. However, the present embodiment is not limited to thisexample, and various known materials may be used as the first substrate11 and the second substrate 34. For example, each of the first substrate11 and the second substrate 34 may include a high strain point glasssubstrate, a soda-lime glass (a mixture of Na₂O, CaO, and SiO₂)substrate, a borosilicate glass (a mixture of Na₂O, B₂O₃, and SiO₂)substrate, a forsterite (Mg₂SiO₄) substrate, a lead glass (a mixture ofNa₂O, PbO, and SiO₂) substrate, various glass substrates in which aninsulating film is formed on a surface, a quartz substrate, a quartzsubstrate in which an insulating film is formed on a surface, a siliconsubstrate in which an insulating film is formed on a surface, or anorganic polymer substrate (for example, polymethyl methacrylate (PMMA),polyvinyl alcohol (PVA), polyvinylphenol (PVP), a polyether sulfone(PES), a polyimide, a polycarbonate, polyethylene terephthalate (PET),or the like). The materials contained in the first substrate 11 and thesecond substrate 34 may be the same, or may be different. However, sincethe display device 1 is of the top emission type as described above, thesecond substrate 34 preferably contains a material with a hightransmittance that can transmit the light from the organic lightemitting diode 211 favorably.

(Light Emitting Element and Second Member)

The organic light emitting diode 211 includes a first electrode 21, anorganic layer 23 provided on the first electrode 21, and a secondelectrode 22 formed on the organic layer 23. More specifically, a secondmember 52 in which openings 25 are provided so as to expose at leastparts of the first electrode 21 is stacked on the first electrode 21,and the organic layer 23 is provided on portions of the first electrode21 that are exposed at the bottoms of the openings 25. That is, theorganic light emitting diode 211 has a configuration in which the firstelectrode 21, the organic layer 23, and the second electrode 22 arestacked in this order in the opening 25 of the second member 52. Thisstacked structure functions as a luminescence section 24 of each pixel.That is, a portion of the organic light emitting diode 211 falling underthe opening 25 of the second member 52 serves as a luminescence surface.Further, the second member 52 functions as a pixel defining film that isprovided between pixels and partitions the area of the pixel.

The organic layer 23 includes a luminescence layer containing an organicluminescent material, and can emit white light. The specificconfiguration of the organic layer 23 is not limited, and may be variouspublicly known configurations. For example, the organic layer 23 mayhave a stacked structure of a hole transport layer, a luminescencelayer, and an electronic transport layer, a stacked structure of a holetransport layer and a luminescence layer that serves also as anelectronic transport layer, a stacked structure of a hole injectionlayer, a hole transport layer, a luminescence layer, an electronictransport layer, and an electron injection layer, or the like. Further,in a case where each of these stacked structures or the like is used asa “tandem unit,” the organic layer 23 may have a tandem structure of twostages in which a first tandem unit, a connection layer, and a secondtandem unit are stacked. Alternatively, the organic layer 23 may have atandem structure of three or more stages in which three or more tandemunits are stacked. In a case where the organic layer 23 includes aplurality of tandem units, an organic layer 23 that emits white light asa whole can be obtained by assigning red, green, and blue to theluminescent colors of the luminescence layers of the tandem units.

In the illustrated configuration example, the organic layer 23 is formedby depositing an organic material by vacuum vapor deposition. However,the present embodiment is not limited to this example, and the organiclayer 23 may be formed by various publicly known methods. For example,as the method for forming the organic layer 23, physical vapordeposition methods (PVD methods) such as the vacuum vapor depositionmethod, printing methods such as the screen printing method and theinkjet printing method, a laser transfer method in which a stackedstructure of a laser absorbing layer and an organic layer formed on asubstrate for transfer is irradiated with laser light to separate theorganic layer on the laser absorbing layer and the organic layer istransferred, various application methods, etc. may be used.

The first electrode 21 functions as an anode. Since the display device 1is of the top emission type as described above, the first electrode 21contains a material capable of reflecting the light from the organiclayer 23. In the illustrated configuration example, the first electrode21 contains an alloy of aluminum and neodymium (Al—Nd alloy). Further,the film thickness of the first electrode 21 is approximately 0.1 μm to1 μm, for example. However, the present embodiment is not limited tothis example, and the first electrode 21 may contain various publiclyknown materials used as the material of an electrode on the lightreflection side that functions as an anode in a common organic ELdisplay device. Further, the film thickness of the first electrode 21 isnot limited to the above example either, and the first electrode 21 maybe formed in film thickness ranges commonly employed in organic ELdisplay devices, as appropriate.

For example, the first electrode 21 may contain a metal with a high workfunction, such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr),tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), ortantalum (Ta), or an alloy with a high work function (for example, aAg—Pd—Cu alloy containing silver as a main component and containing 0.3mass % to 1 mass % of palladium (Pd) and 0.3 mass % to 1 mass % ofcopper, an Al—Nd alloy, or the like). Alternatively, the first electrode21 may contain an electrically conductive material having a small workfunction value and a high light reflectance, such as aluminum or analloy containing aluminum. In this case, it is preferable to improvehole injection properties by providing an appropriate hole injectionlayer on the first electrode 21, or the like. Alternatively, the firstelectrode 21 may have a structure in which a transparent electricallyconductive material excellent in hole injection characteristics, such asan oxide of indium and tin (ITO) or an oxide of indium and zinc (IZO),is stacked on a reflective film with high light reflectivity such as adielectric multiple-layer film or aluminum.

The second electrode 22 functions as a cathode. Since the display device1 is of the top emission type as described above, the second electrode22 contains a material capable of transmitting the light from theorganic layer 23. In the illustrated configuration example, the secondelectrode 22 contains an alloy of magnesium and silver (Mg—Ag alloy).Further, the film thickness of the second electrode 22 is approximately10 nm, for example. However, the present embodiment is not limited tothis example, and the second electrode 22 may contain various publiclyknown materials used as the material of an electrode on the lighttransmission side that functions as a cathode in a common organic ELdisplay device. Further, the film thickness of the second electrode 22is not limited to the above example either, and the second electrode 22may be formed in film thickness ranges commonly employed in organic ELdisplay devices, as appropriate.

For example, the second electrode 22 may contain aluminum, silver,magnesium, calcium (Ca), sodium (Na), strontium (Sr), an alloy of analkali metal and silver, an alloy of an alkaline earth metal and silver(for example, an alloy of magnesium and silver (Mg—Ag alloy)), an alloyof magnesium and calcium (Mg—Ca alloy), an alloy of aluminum and lithium(Al—Li alloy), or the like. In a case where each of these materials isused in a single layer, the film thickness of the second electrode 22 isapproximately 4 nm to 50 nm, for example. Alternatively, the secondelectrode 22 may have a structure in which a layer of any of thematerials described above and a transparent electrode containing, forexample, ITO or IZO (with a thickness of, for example, approximately 30nm to 1 μm) are stacked from the organic layer 23 side. In a case wheresuch a stacked structure is used, the thickness of the layer of any ofthe materials described above may be as thin as approximately 1 nm to 4nm, for example. Alternatively, the second electrode 22 may include onlya transparent electrode. Alternatively, the second electrode 22 may beprovided with a bus electrode (auxiliary electrode) containing a lowresistance material, such as aluminum, an aluminum alloy, silver, asilver alloy, copper, a copper alloy, gold, or a gold alloy, to reducethe resistance of the second electrode 22 as a whole.

In the illustrated configuration example, each of the first electrode 21and the second electrode 22 is formed by forming a material as a filmwith a prescribed thickness by the vacuum vapor deposition method andthen patterning the film by the etching method. However, the presentembodiment is not limited to this example, and the first electrode 21and the second electrode 22 may be formed by various publicly knownmethods. Examples of the method for forming the first electrode 21 andthe second electrode 22 include vapor deposition methods including theelectron beam vapor deposition method, the hot filament vapor depositionmethod, and the vacuum vapor deposition method, the sputtering method,the chemical vapor deposition method (CVD method), the metal organicchemical vapor deposition method (MOCVD method), a combination of theion plating method and the etching method, various printing methods (forexample, the screen printing method, the inkjet printing method, themetal mask printing method, etc.), plating methods (the electroplatingmethod, the electroless plating method, etc.), the lift-off method, thelaser ablation method, the sol-gel method, etc.

The second member 52 is formed by forming SiO₂ as a film with aprescribed film thickness by the CVD method and then patterning the SiO₂film using photolithography technology and etching technology. However,the material of the second member 52 is not limited to this example, andvarious materials having insulating properties may be used as thematerial of the second member 52. Examples of the material contained inthe second member 52 include SiO₂, MgF, LiF, a polyimide resin, anacrylic resin, a fluorine resin, a silicone resin, a fluorine-basedpolymer, a silicone-based polymer, etc. However, as described later, thesecond member 52 contains a material having a lower refractive indexthan the material of a first member 51.

(Configuration of Parts Below Light Emitting Element)

On the first substrate 11, the first electrode 21 included in theorganic light emitting diode 211 is provided on an interlayer insulatinglayer 16 containing SiON. Then, the interlayer insulating layer 16covers a light emitting element driving section formed on the firstsubstrate 11.

The light emitting element driving section includes a plurality of TFTs15. In other words, the light emitting element driving sectioncorresponds to a driving circuit of the pixel circuit 210. The TFT 15includes a gate electrode 12 formed on the first substrate 11, a gateinsulating film 13 formed on the first substrate 11 and the gateelectrode 12, and a semiconductor layer 14 formed on the gate insulatingfilm 13. A region of the semiconductor layer 14 located immediatelyabove the gate electrode 12 functions as a channel region 14A, andregions located so as to sandwich the channel region 14A function assource drain regions 14B. Note that, although in the illustrated examplethe TFT 15 is of a bottom gate type, the present embodiment is notlimited to this example, and the TFT may be of a top gate type.

An interlayer insulating layer 16 including two layers (a lower layerinterlayer insulating layer 16A and an upper layer interlayer insulatinglayer 16B) is stacked on the semiconductor layer 14 by the CVD method.In this event, after the lower layer interlayer insulating layer 16A isstacked, contact holes 17 are provided in portions of the lower layerinterlayer insulating layer 16A corresponding to the source/drainregions 14B so as to expose the source/drain regions 14B, by usingphotolithography technology and etching technology, for example, and aninterconnection 18 containing aluminum is formed so as to fill thecontact hole 17. The interconnections 18 are formed by combining thevacuum vapor deposition method and the etching method, for example.After that, the upper layer interlayer insulating layer 16B is stacked.

In a portion of the upper layer interlayer insulating layer 16B wherethe interconnection 18 is provided, a contact hole 19 is provided so asto expose the interconnection 18, by using photolithography technologyand etching technology, for example. Then, when forming the firstelectrode 21 of the organic light emitting diode 211, the firstelectrode 21 is formed so as to be in contact with the interconnection18 via the contact hole 19. Thus, the first electrode 21 of the organiclight emitting diode 211 is electrically connected to a source/drainregion 14B of a TFT 15 (in the example of the pixel circuit shown inFIG. 3, corresponding to the drain region of the driving transistor 212)via the interconnection 18.

Note that, although in the above example the interlayer insulating layer16 contains SiON, the present embodiment is not limited to this example.The interlayer insulating layer 16 may contain various publicly knownmaterials that can be used as an interlayer insulating layer in a commonorganic EL display device. For example, as the material contained in theinterlayer insulating layer 16, SiO₂-based materials (for example, SiO₂,BPSG, PSG, BSG, AsSG, PbSG, SiON, spin-on glass (SOG), low melting pointglass, a glass paste, and the like), SiN-based materials, and insulatingresins (for example, a polyimide resin, a novolac-based resin, anacrylic-based resin, polybenzoxazole, and the like) may be used singlyor in combination, as appropriate. Further, the method for forming theinterlayer insulating layer 16 is not limited to the above exampleeither, and publicly known methods such as the CVD method, theapplication method, the sputtering method, and various printing methodsmay be used for the formation of the interlayer insulating layer 16.Furthermore, although in the above example the interconnection 18 isformed by forming aluminum as a film and patterning the film by thevacuum vapor deposition method and the etching method, the presentembodiment is not limited to this example. The interconnection 18 may beformed by forming, as a film, any of various materials that are used asan interconnection in a common organic EL display device and patterningthe film by various methods.

(Configuration of Parts Above Light Emitting Element)

The opening 25 provided in the second member 52 of the organic lightemitting diode 211 is formed so as to have a tapered shape in which theside wall of the opening 25 is inclined such that the opening areaincreases with proximity to the bottom. Then, a first member 51 is putin the opening 25. That is, the first member 51 is a layer that isprovided immediately above the luminescence surface of the organic lightemitting diode 211 and that propagates emission light from the lightemitting element upward. Further, by forming the opening 25 of thesecond member 52 in the above manner, a cross-sectional shape in thestacking direction of the first member 51 (that is, the illustratedcross-sectional shape) has a substantially trapezoidal shape, and thusthe first member 51 has a truncated conical or pyramidal shape in whichthe bottom surface faces up.

The first member 51 is formed by forming Si_(1-x)N_(x) as a film by thevacuum vapor deposition method so as to fill the opening 25, and thenplanarizing the surface of the Si_(1-x)N_(x) film by the chemicalmechanical polishing method (CMP method) or the like. However, thematerial of the first member 51 is not limited to this example, andvarious materials having insulating properties may be used as thematerial of the first member 51. Examples of the material contained inthe first member 51 include Si_(1-x)N_(x), ITO, IZO, TiO₂, Nb₂O₅, abromine-containing polymer, a sulfur-containing polymer, atitanium-containing polymer, a zirconium-containing polymer, etc. Themethod for forming the first member 51 is not limited to this exampleeither, and various publicly known methods may be used as the method forforming the first member 51.

However, in the present embodiment, the materials of the first member 51and the second member 52 are selected such that the refractive index n₁of the first member 51 and the refractive index n₂ of the second member52 satisfy the relation of n₁>n₂. By selecting the materials of thefirst member 51 and the second member 52 such that the refractiveindices satisfy the relation mentioned above, at least a part of thelight that has propagated through the first member 51 is reflected at asurface of the second member 52 facing the first member 51. Morespecifically, the organic layer 23 and the second electrode 22 of theorganic light emitting diode 211 are formed between the first member 51and the second member 52, and therefore at least a part of the lightthat has propagated through the first member 51 is reflected at theinterface between the second member 52 and the organic layer 23. Thatis, the surface of the second member 52 facing the first member 51functions as a light reflection section (reflector) 53.

In the present embodiment, the first member 51 is provided immediatelyabove the luminescence surface of the organic light emitting diode 211,as mentioned above. Then, the first member 51 has a truncated conical orpyramidal shape in which the bottom surface faces up, and thereforelight emitted from the luminescence surface of the organic lightemitting diode 211 is reflected upward, which is the light emissiondirection, by the interface between the first member 51 and the secondmember 52, that is, the reflector 53. Thus, according to the presentembodiment, the efficiency of extracting emission light from the organiclight emitting diode 211 can be improved by providing the reflector 53,and the luminance as the entire display device 1 can be improved.

Note that an investigation by the present inventors shows that, toimprove the efficiency of extracting emission light from the organiclight emitting diode 211 more favorably, it is preferable that therefractive indices of the first member 51 and the second member 52satisfy the relation of n₁−n₂≥0.20. It is more preferable that therefractive indices of the first member 51 and the second member 52satisfy the relation of n₁−n₂≥0.30. Furthermore, to further improve theefficiency of extracting emission light from the organic light emittingdiode 211, it is preferable that the shape of the first member 51satisfy the relations of 0.5≤R₁/R₂≤0.8 and 0.5≤H/R₁≤0.8. Here, R₁represents the diameter of the light incidence surface of the firstmember 51 (that is, a surface facing down in the stacking direction andfacing the luminescence surface of the organic light emitting diode211), R₂ represents the diameter of the light emitting surface of thefirst member 51 (that is, a surface facing up in the stackingdirection), and H represents the distance between the bottom surface andthe upper surface (the height in the stacking direction) in a case wherethe first member 51 is regarded as a truncated cone or pyramid.

A protection film 31 and a planarizing film 32 are stacked in this orderon the planarized first member 51. The protection film 31 is formed by,for example, stacking with a prescribed film thickness (approximately3.0 μm) by the vacuum vapor deposition method. Further, the planarizingfilm 32 is formed by, for example, stacking SiO₂ with a prescribed filmthickness (approximately 2.0 μm) by the CVD method and planarizing thesurface by the CMP method or the like.

However, the materials and the film thicknesses of the protection film31 and the planarizing film 32 are not limited to these examples, andthe protection film 31 and the planarizing film 32 may contain variouspublicly known materials used as a protection film and a planarizingfilm of a common organic EL display device so as to have filmthicknesses commonly employed in an organic EL display device, asappropriate.

However, in the present embodiment, it is preferable that the materialof the protection film 31 be selected such that the refractive index n₃of the protection film 31 is equal to the refractive index n₁ of thefirst member 51 or smaller than the refractive index n₁ of the firstmember 51. Furthermore, the materials of the protection film 31 and theplanarizing film 32 are selected such that the absolute value of thedifference between the refractive index n₃ of the protection film 31 andthe refractive index n₄ of the planarizing film 32 is preferably lessthan or equal to 0.30 and more preferably less than or equal to 0.20. Bythus selecting the materials of the protection film 31 and theplanarizing film 32, the reflection or scattering of emission light fromthe organic light emitting diode 211 at the interface between the firstmember 51 and the protection film 31 and the interface between theprotection film 31 and the planarizing film 32 can be suppressed, andlight extraction efficiency can be further improved.

The CF layer 33 is formed on the planarizing film 32. Thus, the displaydevice 1 is a display device of what is called an on-chip color filter(OCCF) system in which the CF layer 33 is formed on the first substrate11 on which the organic light emitting diode 211 is formed. The secondsubstrate 34 is stuck to the upper side of the CF layer 33 via, forexample, a sealing resin film 35 of an epoxy resin or the like, andthereby the display device 1 is fabricated. Note that the material ofthe sealing resin film 35 is not limited to this example, and thematerial of the sealing resin film 35 may be selected in view of hightransmissivity to the emission light from the organic light emittingdiode 211, excellence in adhesiveness to the CF layer 33 located on thelower side and the second substrate 34 located on the upper side, lowreflectivity of light at the interface with the CF layer 33 located onthe lower side and the interface with the second substrate 34 located onthe upper side, etc., as appropriate. However, the present embodiment isnot limited to this example. The display device 1 may be a displaydevice of what is called a facing CF system that is fabricated by the CFlayer 33 being formed on the second substrate 34, and the firstsubstrate 11 and the second substrate 34 being stuck together such thatthe CF layer 33 faces the organic light emitting diode 211.

The CF layer 33 is formed such that a CF of each color having aprescribed area is provided for each of the organic light emitting diode211. The CF layer 33 may be formed by performing exposure on a resistmaterial into a prescribed configuration and performing development byphotolithography technology, for example. Further, the film thickness ofthe CF layer 33 is approximately 2 μm, for example. However, thematerial, the formation method, and the film thickness of the CF layer33 are not limited to these examples, and the CF layer 33 may be formedso as to have a film thickness commonly employed in an organic ELdisplay device by using various publicly known materials that are usedas a CF layer of a common organic EL display device and various publiclyknown methods, as appropriate.

In the illustrated example, the CF layer 33 is provided such that a redCF 33R, a green CF 33G, and a blue CF 33B each having a prescribed areaare continuously distributed in the horizontal plane. Note that, in thefollowing description, in a case where there is no need to particularlydistinguish the CF 33R, the CF 33G, and the CF 33B, one or a pluralityof these may be written as simply a CF 33 a. One sub-pixel includes acombination of one organic light emitting diode 211 and one CF 33 a.

Hereinabove, a specific configuration example of the display device 1 isdescribed. Note that, in regard to the configuration of the displaydevice 1 described hereinabove, particularly the configuration of thereflector 53, JP 2013-191533A, which is a prior application by thepresent applicant, may be referred to, for example. However, theconfiguration of the display device 1 according to the presentembodiment is not limited to this example. As described above, it issufficient that the respects described in (4-2. Layout according topresent embodiment) above be reflected in the display device 1 accordingto the present embodiment, and various known configurations used inordinary display devices may be used for the other respects.

6. APPLICATION EXAMPLES

Application examples of the display device 1 according to the presentembodiment described hereinabove will now be described. Herein, someexamples of electronic apparatuses in which the display device 1according to the present embodiment described hereinabove can be usedare described.

FIG. 10 is a diagram showing an external appearance of a smartphone thatis an example of the electronic apparatus in which the display device 1according to the present embodiment can be used. As shown in FIG. 10, asmartphone 501 includes an operation section 503 that includes a buttonand accepts an operation input by the user and a display section 505that displays various pieces of information. The display device 1 may beapplied to the display section 505.

FIG. 11 and FIG. 12 are diagrams showing external appearances of adigital camera that is another example of the electronic apparatus inwhich the display device 1 according to the present embodiment can beused. FIG. 11 shows an external appearance of a digital camera 511 asseen from the front side (the subject side), and FIG. 12 shows anexternal appearance of the digital camera 511 as seen from the rearside. As shown in FIG. 11 and FIG. 12, the digital camera 511 includes amain body section (camera body) 513, a replaceable lens unit 515, a gripsection 517 that is gripped by the user during photographing, a monitor519 that displays various pieces of information, and an electronic viewfinder (EVF) 521 that displays a through image that is observed by theuser during photographing. The display device 1 may be applied to themonitor 519 and the EVF 521.

FIG. 13 is a diagram showing an external appearance of a head mounteddisplay (HMD) that is another example of the electronic apparatus inwhich the display device 1 according to the present embodiment can beused. As shown in FIG. 13, an HMD 531 includes an eyeglass-type displaysection 533 that displays various pieces of information and ear-fixingsections 535 that are fixed to the user's ears during wearing. Thedisplay device 1 may he applied to the display section 533.

Hereinabove, some examples of the electronic apparatus in which thedisplay device 1 according to the present embodiment can be used aredescribed. Note that the electronic apparatus in which the displaydevice 1 can be used is not limited to those described above asexamples, and the display device 1 can be used for display devices thatare mounted on electronic apparatuses in all fields that perform displayon the basis of an image signal inputted from the outside or an imagesignal generated in the inside, such as a television device, anelectronic book, a smart phone, a personal digital assistant (PDA), anotebook personal computer (PC), a video camera, and a game apparatus.

7. SUPPLEMENT

The preferred embodiment(s) of the present disclosure has/have beendescribed above with reference to the accompanying drawings, whilst thepresent disclosure is not limited to the above examples. A personskilled in the art may find various alterations and modifications withinthe scope of the appended claims, and it should be understood that theywill naturally come under the technical scope of the present disclosure.

For example, although in the embodiment described above each of thetransistors (the driving transistor 212, the sampling transistor 213,the light emission control transistor 214, and the switching transistor217) included in the driving circuit of the pixel circuit 210 is of aP-channel type, the technology according to the present disclosure isnot limited to this example. For example, each of these transistors maybe of an N-channel type.

Further, the effects described in this specification are merelyillustrative or exemplified effects, and are not limitative. That is,with or in the place of the above effects, the technology according tothe present disclosure may achieve other effects that are clear to thoseskilled in the art from the description of this specification.

Additionally, the present technology may also be configured as below.

-   (1)

A display device including:

a pixel unit in which a plurality of pixel circuits each of whichincludes a light emitting element and a driving circuit configured todrive the light emitting element are arranged in a matrix form,

in which, in a diffusion layer in which transistors included in thedriving circuits of the pixel circuits are formed, an electricity supplyregion that is an active area for supplying an electric potential to awell is provided between mutually adjacent ones of the pixel circuits.

-   (2)

The display device according to (1),

in which the electricity supply region is provided at least in a partbetween active areas where a parasitic capacitance is caused to occur,between mutually adjacent ones of the pixel circuits.

-   (3)

The display device according to (1) or (2),

in which the electricity supply region is provided in each of the pixelcircuits at least on a one-to-one basis.

-   (4)

The display device according to any one of (1) to (3),

in which the electricity supply region is provided along a boundarybetween mutually adjacent ones of the pixel circuits.

-   (5)

The display device according to any one of (1) to (3),

in which the electricity supply region is provided so as to surroundeach of the pixel circuits.

-   (6)

The display device according to any one of (1) to (5),

in which a plurality of the electricity supply regions are provided ineach of the pixel circuits.

-   (7)

The display device according to any one of (1) to (6),

in which the light emitting element is an organic light emitting diode.

-   (8)

An electronic apparatus including:

a display device configured to perform display on a basis of a videosignal,

in which the display device includes

-   -   a pixel unit in which a plurality of pixel circuits each of        which includes a light emitting element and a driving circuit        configured to drive the light emitting element are arranged in a        matrix form, and

in a diffusion layer in which transistors included in the drivingcircuits of the pixel circuits are formed, an electricity supply regionthat is an active area for supplying an electric potential to a well isprovided between mutually adjacent ones of the pixel circuits.

REFERENCE SIGNS LIST

-   1 display device-   10 display panel-   20 pixel unit-   30 scanning unit-   40 selection unit-   210 pixel circuit-   211 organic light emitting diode-   212 driving transistor-   213 sampling transistor-   214 light emission control transistor-   215 holding capacitance-   216 auxiliary capacitance-   217 switching transistor-   221 anode region-   222 gate region-   223 electricity supply region-   301 writing scanning unit-   302 scanning line-   311 first driving scanning unit-   312 first driving line-   321 second driving scanning unit-   322 second driving line-   331 common power supply line-   332 power supply line-   333 ground line-   401 signal output unit-   402 signal line-   501 smartphone (electronic apparatus)-   511 digital camera (electronic apparatus)-   531 HMD (electronic apparatus)

1. A display device comprising: a pixel unit in which a plurality ofpixel circuits each of which includes a light emitting element and adriving circuit configured to drive the light emitting element arearranged in a matrix form, wherein, in a diffusion layer in whichtransistors included in the driving circuits of the pixel circuits areformed, an electricity supply region that is an active area forsupplying an electric potential to a well is provided between mutuallyadjacent ones of the pixel circuits.
 2. The display device according toclaim 1, wherein the electricity supply region is provided at least in apart between active areas where a parasitic capacitance is caused tooccur, between mutually adjacent ones of the pixel circuits.
 3. Thedisplay device according to claim 1, wherein the electricity supplyregion is provided in each of the pixel circuits at least on aone-to-one basis.
 4. The display device according to claim 1, whereinthe electricity supply region is provided along a boundary betweenmutually adjacent ones of the pixel circuits.
 5. The display deviceaccording to claim 1, wherein the electricity supply region is providedso as to surround each of the pixel circuits.
 6. The display deviceaccording to claim 1, wherein a plurality of the electricity supplyregions are provided in each of the pixel circuits.
 7. The displaydevice according to claim 1, wherein the light emitting element is anorganic light emitting diode.
 8. An electronic apparatus comprising: adisplay device configured to perform display on a basis of a videosignal, wherein the display device includes a pixel unit in which aplurality of pixel circuits each of which includes a light emittingelement and a driving circuit configured to drive the light emittingelement are arranged in a matrix form, and in a diffusion layer in whichtransistors included in the driving circuits of the pixel circuits areformed, an electricity supply region that is an active area forsupplying an electric potential to a well is provided between mutuallyadjacent ones of the pixel circuits.